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參數(shù)資料
| 型號： | BFG310XR |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 14 GHz wideband transistor |
| 中文描述： | npn型14 GHz的寬帶晶體管 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BFG310XR |
9397 750 14245
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
3 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
5.
Limiting values
[1]
T
sp
is the temperature at the soldering point of the collector pin.
6.
Thermal characteristics
[1]
T
sp
is the temperature at the soldering point of the collector pin.
7.
Characteristics
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current (DC)
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
15
6
2
10
60
+175
175
Unit
V
V
V
mA
mW
°
C
°
C
T
sp
≤
145
°
C
[1]
-
65
-
Table 6:
Symbol Parameter
R
th(j-sp)
thermal resistance from junction to solder point
Thermal characteristics
Conditions
T
sp
≤
145
°
C
Typ
Unit
K/W
[1]
530
Table 7:
T
j
= 25
°
C; unless otherwise specified.
Symbol Parameter
I
CBO
collector-base cut-off current
h
FE
DC current gain
C
CBS
collector-base capacitance
C
CES
collector-emitter capacitance
C
EBS
emitter-base capacitance
f
T
transition frequency
Characteristics
Conditions
I
E
= 0 A; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 3 V
V
CB
= 5 V; f = 1 MHz; emitter grounded
V
CE
= 5 V; f = 1 MHz; base grounded
V
EB
= 0.5 V; f = 1 MHz; collector grounded
I
C
= 5 mA; V
CE
= 3 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 3 V; T
amb
= 25
°
C;
Z
S
= Z
L
= 50
f = 1.8 GHz
f = 3 GHz
Γ
s
=
Γ
opt
; I
C
= 1 mA; V
CE
= 3 V; f = 2 GHz
I
C
= 5 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
°
C; Z
S
= Z
L
= 50
I
C
= 5 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
°
C; Z
S
= Z
L
= 50
Min
-
60
-
-
-
-
Typ
-
100
0.17
0.22
0.16
14
Max
15
200
0.3
-
-
-
Unit
nA
pF
pF
pF
GHz
MSG
maximum stable gain
-
18
-
dB
|
s
21
|
2
insertion power gain
-
-
-
-
14
11
1
1.8
-
-
-
-
dB
dB
dB
dBm
NF
P
L(1dB)
noise figure
output power at 1 dB gain
compression
third order intercept point
IP3
-
8.5
-
dBm
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