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參數(shù)資料
| 型號： | BFG25X |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 5GHz wideband transistor(NPN 5G赫茲 寬帶晶體管) |
| 中文描述： | 叩5GHz的寬帶晶體管（npn型第五代赫茲寬帶晶體管） |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 143K |
| 代理商： | BFG25X |
1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
FEATURES
Low current consumption
(100
μ
A to 1 mA)
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
PINNING
PIN
DESCRIPTION
BFG25AW
1
2
3
4
collector
base
emitter
emitter
BFG25AW/X
1
2
3
4
collector
emitter
base
emitter
MARKING
TYPE NUMBER
CODE
BFG25AW
BFG25AW/X
N6
V1
Fig.1 SOT343N.
fpage
Top view
MBK523
2
1
3
4
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
TYP.
80
0.2
5
16
MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
open emitter
open base
8
5
6.5
500
200
0.3
V
V
mA
mW
T
s
≤
85
°
C
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 0; V
CE
= 1 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz; T
amb
= 25
°
C 3.5
I
C
= 0.5 mA; V
CE
= 1 V; f = 1 GHz; T
amb
= 25
°
C
pF
GHz
dB
F
Γ
s
= Γ
opt
; I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz
2
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
8
5
2
6.5
500
+150
175
V
V
V
mA
mW
°
C
°
C
T
s
≤
85
°
C; see Fig.2; note 1
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