- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385135 > BFG25AW (NXP Semiconductors N.V.) NPN 5 GHz wideband transistor PDF資料下載
參數(shù)資料
| 型號： | BFG25AW |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 5 GHz wideband transistor |
| 封裝： | BFG25AW/X<SOT343N (SOT343N)|<<http://www.nxp.com/packages/SOT343N.html<1<week 52, 2002,; |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 346K |
| 代理商： | BFG25AW |
1998 Sep 23
3
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
85
C; note 1
180
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
3.5
TYP.
80
0.2
5
MAX.
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 1 mA; I
B
= 0
emitter-base breakdown voltage
collector leakage current
DC current gain
feedback capacitance
transition frequency
I
C
= 100
A; I
E
= 0
8
5
2
50
200
0.3
V
V
V
nA
I
E
= 100
A; I
C
= 0
open emitter; V
CB
= 5 V; I
E
= 0
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 0; V
CE
= 1 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
C
I
C
= 0.5 mA; V
CE
= 1 V;
f = 2 GHz; T
amb
= 25
C
s
opt
; I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz
s
opt
; I
C
= 1 mA; V
CE
= 1 V;
f = 1 GHz
pF
GHz
G
UM
maximum unilateral power gain;
note 1
16
dB
8
dB
F
noise figure
1.9
dB
2
dB
G
UM
10
S
1
1
S
112
–
S
222
–
---------------------------------------------------------- dB.
log
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFG25A | NPN 5 GHz wideband transistor |
| BFG25A | NPN 5 GHz wideband transistor |
| BFG310W | NPN 14 GHz wideband transistor |
| BFG310W | NPN 14 GHz wideband transistor |
| BFG310W | NPN 14 GHz wideband transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG25AW/X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistors |
| BFG25AW/X,115 | 功能描述:射頻雙極小信號晶體管 Single NPN 5V 6.5mA 500mW 50 5GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG25AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor |
| BFG25X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor |
| BFG-2802 | 制造商:Misc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。