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參數(shù)資料
| 型號(hào)： | BFG11W |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 2 GHz power transistor |
| 中文描述： | 叩2 GHz的功率晶體管 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | BFG11W |
1996 Jun 04
4
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
RF performance at T
s
≤
60
°
C in a common-emitter test circuit.
Ruggedness in class-AB operation
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions at f = 1.9 GHz: t
p
= 1.25 ms,
δ
= 1 : 8 at V
CE
= 7 V and t
p
= 5 ms,
δ
= 1 : 2 at
V
CE
= 4.5 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
5
4
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
I
C
= 0.1 mA; open emitter
I
C
= 10 mA; open base
I
E
= 0.1 mA; open collector
V
CE
= 8 V; V
BE
= 0
V
CE
= 5 V; I
C
= 100 mA
V
CB
= 3.6 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 3.6 V; I
C
= 0; f = 1 MHz
20
8
2.5
25
V
V
V
μ
A
pF
pF
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(mA)
P
L
(mW)
G
p
(dB)
≥
6
η
c
(%)
≥
60
Pulsed, class-AB,
δ
< 1 : 2; t
p
= 5 ms
1.9
3.6
1
400
V
CE
= 3.6 V; V
BE
= 0.65 V; f = 1.9 GHz;
δ
< 1 : 8; t
p
= 1.25 ms.
Fig.3
Power gain and efficiency as functions
of load power; typical values.
handbook, halfpage
Gp
(dB)
0
200
400
800
6
2
0
4
90
70
30
10
50
MGD412
600
PL (mW)
η
C
(%)
η
C
Gp
V
CE
= 3.6 V; I
= 1 mA; f
= 1990.0 MHz;
f
2
= 1990.1 MHz;
δ
= 1 : 8; t
p
= 625
μ
s.
Fig.4
Two tone intermodulation distortion
and efficiency as functions of average
output power; typical values.
handbook, halfpage
(dBc)
0
30
80
60
MGD552
40
20
10
20
Po(av) (dBm)
η
c
(%)
η
c
60
80
0
20
40
dim
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