參數(shù)資料
型號: BFE520
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN wideband differential transistor(NPN寬帶差分晶體管)
中文描述: 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-88A, 5 PIN
文件頁數(shù): 5/8頁
文件大?。?/td> 59K
代理商: BFE520
1996 Oct 08
5
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
APPLICATION INFORMATION
SPICE parameters for any single BFE520 die
Note
1.
These parameters have not been extracted, the
default values are shown.
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
(1)
20
(1)
21
(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35
(1)
36
(1)
37
(1)
38
PARAMETER
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
VALUE
1.016
220.1
1.000
48.06
510.0
283.0
2.035
100.7
0.988
1.692
2.352
24.48
1.022
10.00
1.000
10.00
775.3
2.210
0.000
1.110
3.000
1.245
600.0
0.258
8.616
6.788
1.414
110.3
45.01
447.6
189.2
0.071
0.130
543.7
0.000
750.0
0.000
0.780
UNIT
fA
V
mA
fA
V
mA
aA
μ
A
m
eV
pF
mV
ps
V
mA
deg
fF
mV
ps
F
mV
Fig.2
Package equivalent circuit SOT353B
(inductance only).
handbook, halfpage
B1
B2
C1
C2
LB
LB
MBG190
LP
LP
T1
T2
LE
E
LE
LP
Fig.3
Package capacitance (fF) between
indicated nodes.
35
E
B2
C2
C1
3.5
35
2
0.4
0.8
0.6
LP
Lead inductances (nH)
LB
LE
35
36
35
2
36
15
B1
E
B2
C2
MBG191
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