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參數(shù)資料
| 型號： | BFE520 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN wideband differential transistor(NPN寬帶差分晶體管) |
| 中文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-88A, 5 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 59K |
| 代理商： | BFE520 |
1996 Oct 08
4
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Maximum gain of the differential amplifier is higher because of internal emitter connection (see Fig.2).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 10
μ
A; I
B
= 0
emitter-base breakdown voltage
collector-base leakage current
DC current gain
I
C
= 2.5
μ
A; I
E
= 0
20
8
2.5
60
120
50
250
V
V
V
nA
I
E
= 2.5
μ
A; I
C
= 0
I
E
= 0; V
CB
= 6 V
I
C
= 20 mA; V
CE
= 6 V
DC characteristics of the dual transistor
h
FE
ratio of highest and lowest DC
current gain
V
BEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
I
C1
= I
C2
= 20 mA;
V
CE1
= V
CE2
= 6 V
I
E1
= I
E2
= 30 mA; T
amb
= 25
°
C
1
1.2
0
1
mV
AC characteristics of any single transistor
f
T
transition frequency
I
C
= 20 mA; V
CE
= 3 V;
f = 1 GHz
I
E
= i
e
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 3 V;
f = 900 MHz; T
amb
= 25
°
C
I
C
= 20 mA; V
CE
= 3 V;
f = 2 GHz; T
amb
= 25
°
C
I
C
= 20 mA; V
CE
= 3 V;
f = 900 MHz; T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 3 V;
f = 900 MHz;
Γ
S
=
Γ
opt
I
C
= 5 mA; V
CE
= 3 V;
f = 2 GHz;
Γ
S
=
Γ
opt
9
GHz
C
c
C
re
MSG/G
max
collector capacitance
feedback capacitance
maximum power gain; note 1
0.4
0.35
16
0.45
0.4
pF
pF
dB
9
dB
insertion power gain
13
14
dB
F
noise figure
1.1
1.6
dB
1.9
dB
s
21
2
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