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參數(shù)資料
| 型號： | BF998RW |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 253K |
| 代理商： | BF998RW |
www.vishay.com
4
Document Number 85011
Rev. 1.5, 31-Aug-04
VISHAY
BF998 / BF998R / BF998RW
Vishay Semiconductors
Figure 7. Transducer Gain vs. Gate 1 Source Voltage
Figure 8. Forward Transadmittance vs. Drain Current
Figure 9. Short Circuit Input Admittance
–50
–40
–30
–20
–10
0
10
–1.0
–0.5
0.0
0.5
1.0
1.5
V
G1S
– Gate 1 Source Voltage ( V )
12818
S
-
2
2
4 V
3 V
0
2 V
1 V
f = 800 MHz
–0.2 V
V
G2S
= –0.8 V
–0.4 V
0
4
8
12
16
20
24
28
32
0
4
8
12
16
20
24
28
I
D
– Drain Current ( mA )
12819
V
DS
= 8 V
f = 1 MHz
V
G2S
= 4 V
2 V
1 V
0
3 V
y
–
2
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
Re (y
11
) ( mS )
12820
I
1
V
DS
= 8 V
V
G2S
= 4 V
I
f = 100...1300 MHz
f = 1300 MHz
700 MHz
400 MHz
1000 MHz
100 MHz
Figure 10. Short Circuit Forward Transfer Admittance
Figure 11. Short Circuit Output Admittance
–40
–35
–30
–25
–20
–15
–10
–5
0
5
0
4
8
12
Re (y
21
) ( mS )
16
20
24
28
32
12821
I
2
V
DS
= 8 V
V
= 4 V
f = 100...1300 MHz
f = 100 MHz
1300 MHz
1000 MHz
400 MHz
700 MHz
I
D
= 5 mA
10 mA
20 mA
0
1
2
3
4
5
6
7
8
9
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Re (y
22
) ( mS )
12822
I
2
V
DS
= 15 V
V
G2S
= 4 V
I
D
=10 mA
f = 100...1300 MHz
f = 1300 MHz
1000 MHz
400 MHz
100 MHz
700 MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF998RW-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin SOT-343R T/R |
| BF998T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF998W | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| BF998WR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FET |
| BF998WR T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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