- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄357614 > BF998RW (VISHAY SEMICONDUCTORS) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | BF998RW |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 253K |
| 代理商： | BF998RW |
VISHAY
BF998 / BF998R / BF998RW
Vishay Semiconductors
Document Number 85011
Rev. 1.5, 31-Aug-04
www.vishay.com
3
Typical Characteristics
(T
amb
= 25
°
C unless otherwise specified)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Drain Current vs. Drain Source Voltage
Figure 3. Drain Current vs. Gate 1 Source Voltage
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
96 12159
P
-
T
t
T
amb
- Ambient Temperature (
°
C )
0
5
10
15
20
25
30
0
2
4
6
8
10
V
DS
– Drain Source Voltage ( V )
12812
I
D
V
G1S
= 0.6 V
0.4 V
0
–0.4 V
0.2 V
V
G2S
= 4V
–0.2 V
0
–0.8
4
8
12
16
20
–0.4
V
G1S
– Gate 1 Source Voltage ( V )
0.0
0.4
0.8
1.2
12816
I
D
6 V
5 V
4 V
0
2 V
1 V
3 V
V
DS
= 8V
V
G2S
= –1 V
Figure 4. Drain Current vs. Gate 2 Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
0
4
8
12
16
20
–0.6
–0.2
V
G2S
– Gate 2 Source Voltage ( V )
0.2
0.6
1.0
1.4
12817
I
D
0
2 V
1 V
3 V
V
DS
= 8V
5 V
V
G1S
= –1 V
4 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-2
-1.5
-1
-0.5
0
0.5
1.0
1.5
V
G1S
– Gate 1 Source Voltage ( V )
12863
C
–
i
V
DS
= 8 V
V
= 4 V
f = 1 MHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
4
6
8
10
12
V
DS
– Drain Source Voltage ( V )
12864
C
–
o
V
G2S
= 4 V
f = 1 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFL-563T | 1 ELEMENT, 56000 uH, GENERAL PURPOSE INDUCTOR |
| BFL-123B | 1 ELEMENT, 12000 uH, GENERAL PURPOSE INDUCTOR |
| BFR182TF | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| BFS-222T | 1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR |
| BFS-183B | 1 ELEMENT, 18000 uH, GENERAL PURPOSE INDUCTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF998RW-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin SOT-343R T/R |
| BF998T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF998W | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| BF998WR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FET |
| BF998WR T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。