參數(shù)資料
型號: BF997
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
中文描述: VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
文件頁數(shù): 4/5頁
文件大?。?/td> 31K
代理商: BF997
April 1991
4
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF997
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
D
= 10 mA; V
DS
= 15 V; V
G2-S
= 4 V; T
amb
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
±
50
±
50
±
20
±
20
2.5
2
20
UNIT
I
G1-SS
I
G2-SS
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
(P)G1-S
gate 1-source cut-off voltage
V
(P)G2-S
gate 2-source cut-off voltage
I
DSS
drain-source cut-off voltage
gate 1 cut-off current
gate 2 cut-off current
V
G1-S
=
±
5 V; V
G2-S
= V
DS
= 0
V
G2-S
=
±
5 V; V
G1-S
= V
DS
= 0
I
G1-SS
=
±
10 mA; V
G2-S
= V
DS
= 0
I
G2-SS
=
±
10 mA; V
G1-S
= V
DS
= 0
I
D
= 20
μ
A; V
DS
= 15 V; V
G2-S
= 4 V
I
D
= 20
μ
A; V
DS
= 15 V; V
G1-S
= 0
V
DS
= 15 V; V
G2-S
= 4 V; V
G1-S
= 0
±
6
±
6
2
nA
nA
V
V
V
V
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
UNIT
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
power gain
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
;
G
L
= 0.5 mS; B
L
= B
Lopt
15
18
2.5
1.2
25
1
1
25
mS
pF
pF
fF
pF
dB
dB
C
ig1-s
C
ig2-s
C
rs
C
os
F
G
p
Y
fs
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