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參數(shù)資料
| 型號(hào)： | BF997 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 31K |
| 代理商： | BF997 |
April 1991
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF997
FEATURES
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source
Integrated drain resistance to suppress oscillation in the
frequency range greater than 1 GHz.
APPLICATIONS
UHF and VHF applications such as:
– UHF/VHF television tuners
– Professional communication equipment
Especially intended for use in pre-amplifiers in CATV
tuners with a large tuning range up to 500 MHz.
PINNING
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Fig.1 Simplified outline (SOT143) and symbol.
Marking code:
MKp.
handbook, halfpage
s,b
d
g1
g2
4
3
2
1
Top view
MAM039
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
T
j
Y
fs
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
input capacitance at gate 1 f = 1 MHz; I
D
= 10 mA; V
DS
= 15 V; V
G2-S
= 4 V
feedback capacitance
f = 1 MHz; I
D
= 10 mA; V
DS
= 15 V; V
G2-S
= 4 V
noise figure
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
;
I
D
= 10 mA; V
DS
= 15 V; V
G2-S
= 4 V
18
2.5
25
1
20
30
200
150
V
mA
mW
°
C
mS
pF
fF
dB
up to T
amb
= 60
°
C
f = 1 kHz; I
D
= 10 mA; V
DS
= 15 V; V
G2-S
= 4 V
C
ig1-s
C
rs
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFC14 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 56A I(D) | SOT-227B |
| BFC15 | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 33A I(D) | SOT-227B |
| BFC16 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 40A I(D) | SOT-227B |
| BFC17 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 57A I(D) | SOT-227B |
| BFC18 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 71A I(D) | SOT-227B |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF997T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF998 | 制造商:NXP Semiconductors 功能描述:MOSFET N RF DUAL-GATE SOT-143 制造商:NXP Semiconductors 功能描述:MOSFET, N, RF, DUAL-GATE, SOT-143 制造商:VISHAY SEMICONDUCTOR 功能描述:Trans MOSFET N-CH 12V 0.03A 4-Pin (3+Tab) SOT-143 制造商:Infineon Technologies AG 功能描述:RF MOSFET N-Channel 12V 0.03A SOT143 制造商:NXP Semiconductors 功能描述:RF MOSFET N-Ch 12V 30mA Dual Gate SOT143 |
| BF998 T/R | 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B T/R |
| BF998,215 | 功能描述:射頻MOSFET小信號(hào)晶體管 N-CH DUAL GATE 12V VHF/UHF RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF998,215-CUT TAPE | 制造商:NXP 功能描述:BF998 Series 12 V 30 mA N-channel Dual-gate MOS-FET - SOT143B |
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