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參數(shù)資料
| 型號： | BF996SB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N.頻道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BF996SB |
BF996S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
5 (8)
Document Number 85010
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
2
4
6
8
10 12 14 16 18 20
V
DS
– Drain Source Voltage ( V )
12856
C
o
V
G2S
=4V
f=1MHz
Figure 7. Output Capacitance vs. Drain Source Voltage
–60
–50
–40
–30
–20
–10
0
10
–2.0 –1.5 –1.0 –0.5 0.0
V
G1S
– Gate 1 Source Voltage ( V )
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
0.5
1.0
1.5
2.0
12855
S
2
2
4V
3V
0
2V
1V
f=200MHz
–0.2V
–0.4V
V
G2S
=–1V
–0.8V
–0.6V
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
I
D
– Drain Current ( mA )
12850
V
DS
=15V
f=1MHz
4V
3V
2V
1V
0.5V
V
G2S
=0
y
2
Figure 9. Forward Transadmittance vs. Drain Current
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
Re (y
11
) ( mS )
12857
I
1
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
700MHz
1100MHz
500MHz
900MHz
300MHz
f=1300MHz
100MHz
Figure 10. Short Circuit Input Admittance
–25
–20
–15
–10
–5
0
–15
–10
–5
0
5
10
15
20
Re (y
21
) ( mS )
12858
I
2
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=100MHz
1300MHz
500MHz
300MHz
1100MHz
900MHz
700MHz
I
D
=5mA
10mA
15mA
Figure 11. Short Circuit Forward Transfer Admittance
0
1
2
3
4
5
6
7
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Re (y
22
) ( mS )
12859
I
2
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
f=1300MHz
900MHz
500MHz
300MHz
100MHz
700MHz
1100MHz
Figure 12. Short Circuit Output Admittance
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| BF996SA | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998 | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RBW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998R | RES,Metal Glaze,33.2Ohms,200WV,1+/-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No |
| BF998RW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF996ST/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF997 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
| BF997T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF998 | 制造商:NXP Semiconductors 功能描述:MOSFET N RF DUAL-GATE SOT-143 制造商:NXP Semiconductors 功能描述:MOSFET, N, RF, DUAL-GATE, SOT-143 制造商:VISHAY SEMICONDUCTOR 功能描述:Trans MOSFET N-CH 12V 0.03A 4-Pin (3+Tab) SOT-143 制造商:Infineon Technologies AG 功能描述:RF MOSFET N-Channel 12V 0.03A SOT143 制造商:NXP Semiconductors 功能描述:RF MOSFET N-Ch 12V 30mA Dual Gate SOT143 |
| BF998 T/R | 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B T/R |
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