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參數(shù)資料
| 型號： | BF996SB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N.頻道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 133K |
| 代理商： | BF996SB |
BF996S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (8)
Rev. 3, 20-Jan-99
Document Number 85010
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Test Conditions
Type
Symbol
V
(BR)DS
Min
20
Typ
Max
Unit
V
I
D
= 10 A, –V
G1S
= –V
G2S
= 4 V
±
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±
V
(BR)G1SS
8
14
V
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
±
V
(BR)G2SS
8
14
V
±
V
G1S
= 5 V, V
G2S
= V
DS
= 0
±
I
G1SS
50
nA
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
±
I
G2SS
50
nA
V
= 15 V, V
= 0, V
= 4 V
DS
G1S
BF996S
BF996SA
BF996SB
I
DSS
I
DSS
I
DSS
4
4
18
10.5
18
2.5
mA
mA
mA
V
G2S
9.5
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20 A
–V
G1S(OFF)
V
DS
= 15 V, V
G1S
= 0, I
D
= 20 A
–V
G2S(OFF)
2.0
V
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
y
21s
C
issg1
C
issg2
C
rss
C
oss
G
ps
G
ps
G
ps
F
F
Min
15
Typ
18.5
2.2
1.1
25
10.8
25
18
Max
Unit
mS
pF
pF
fF
pF
dB
dB
dB
dB
dB
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
2.6
V
G1S
= 0, V
G2S
= 4 V
35
1.2
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
V
G2S
= 4 to –2 V, f = 800 MHz
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
AGC range
Noise figure
40
1.0
1.8
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| BF996SA | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
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| BF998RBW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998R | RES,Metal Glaze,33.2Ohms,200WV,1+/-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF996ST/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF997 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
| BF997T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF998 | 制造商:NXP Semiconductors 功能描述:MOSFET N RF DUAL-GATE SOT-143 制造商:NXP Semiconductors 功能描述:MOSFET, N, RF, DUAL-GATE, SOT-143 制造商:VISHAY SEMICONDUCTOR 功能描述:Trans MOSFET N-CH 12V 0.03A 4-Pin (3+Tab) SOT-143 制造商:Infineon Technologies AG 功能描述:RF MOSFET N-Channel 12V 0.03A SOT143 制造商:NXP Semiconductors 功能描述:RF MOSFET N-Ch 12V 30mA Dual Gate SOT143 |
| BF998 T/R | 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B T/R |
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