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參數(shù)資料
| 型號： | BF966S |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | BF966S |
BF966S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
4 (8)
Rev. 3, 20-Jan-99
Document Number 85004
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
–3
–2
–1
0
1
2
3
4
5
6
V
G2S
– Gate 2 Source Voltage ( V )
Figure 7. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
12767
C
i
V
DS
=15V
V
G1S
=0
f=1MHz
–70
–60
–50
–40
–30
–20
–10
0
10
–5
–4
–3
–2
–1
0
1
2
3
V
G1S
– Gate 1 Source Voltage ( V )
12768
S
2
2
4V
3V
0V
2V
1V
f=200MHz
–0.5V
V
G2S
=–2...–3V
–1V
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
24
0
5
10
15
20
25
30
I
D
– Drain Current ( mA )
12769
Y
2
V
DS
=15V
f=1MHz
V
G2S
=4V
2V
3V
1V
0.5V
0V
Figure 9. Forward Transadmittance vs. Drain Current
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20
Re (y
11
) ( mS )
12770
I
1
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=1300MHz
700MHz
400MHz
1000MHz
100MHz
I
D
=5mA
I
D
=10mA
I
D
=20mA
Figure 10. Short Circuit Input Admittance
–0.1
0.0
0.1
0.2
0.3
0
0.1
0.2
Re (y
12
) ( mS )
0.3
0.4
0.5
12772
I
1
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=1300MHz
700MHz
I
D
=5mA
10mA
20mA
1000MHz
Figure 11. Short Circuit Reverse Transfer Admittance
–40
–35
–30
–25
–20
–15
–10
–5
0
5
–8
–4
0
4
Re (y
21
) ( mS )
8
12
16
20
24
12771
I
2
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=100MHz
1300MHz
1000MHz
400MHz
700MHz
I
D
=5mA
10mA
20mA
Figure 12. Short Circuit Forward Transfer Admittance
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