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參數(shù)資料
| 型號(hào)： | BF966S |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | BF966S |
BF966S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (8)
Document Number 85004
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
– Ambient Temperature (
°
C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
96 12159
P
t
0
4
8
12
16
20
24
28
32
36
0
2
4
6
8
10
12
14
16
V
DS
– Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
12762
I
D
V
G1S
=2V
1.5V
1V
0V
–0.5V
–1V
0.5V
V
G2S
=4V
0
10
20
30
40
50
60
70
80
90
100
–1
0
V
G1S
– Gate 1 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
1
2
3
4
5
12763
I
D
V
G2S
=6V
5V
4V
0V
–1V
2V
1V
3V
V
DS
=15V
0
10
20
30
40
50
60
70
80
–1
0
V
G2S
– Gate 2 Source Voltage ( V )
Figure 4. Drain Current vs. Gate 2 Source Voltage
1
2
3
4
5
12764
I
D
0V
2V
1V
3V
V
DS
=15V
–1V
V
G1S
=4V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
3
6
9
12 15 18 21 24 27 30
I
D
– Drain Current ( mA )
12765
C
i
V
DS
=15V
V
G2S
=4V
f=1MHz
Figure 5. Gate 1 Input Capacitance vs. Drain Current
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
2
4
6
8
10 12 14 16 18 20
V
DS
– Drain Source Voltage ( V )
12766
C
o
V
G2S
=4V
I
D
=10mA
f=1MHz
Figure 6. Output Capacitance vs. Drain Source Voltage
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