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參數(shù)資料
| 型號(hào)： | BF961B |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | BF961B |
VISHAY
BF961
Document Number 85002
Rev. 1.5, 25-Nov-04
Vishay Semiconductors
www.vishay.com
3
Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage
Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
24
–2
–1
0
1
2
3
4
5
6
V
G2S
– Gate 2 Source Voltage ( V )
96 12161
Y
–
2
V
DS
= 15 V
I
DS
= 10 mA
V
G1S
= 0.5 V
0 V
–0.5 V
0
2
4
6
8
10
12
14
16
18
20
22
-2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5
V
G1S
- Gate 1 Source Voltage ( V )
96 12162
Y
–
2
V
DS
= 15 V
f = 1 MHz
V
G2S
= 5 V
4 V
3 V
2 V
1 V
0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–2.0–1.5–1.0–0.50.0 0.5 1.0 1.5 2.0 2.5 3.0
V
G1S
– Gate 1 Source Voltage ( V )
96 12163
C
–
i
V
DS
= 15 V
V
= 4 V
f = 1 MHz
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
Figure 7. Output Capacitance vs. Drain Source Voltage
Figure 8. Short Circuit Input Admittance
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
–2
–1
0
1
2
3
4
5
6
7
V
G2S
– Gate 2 Source Voltage ( V )
96 12164
C
–
i
V
DS
= 15 V
V
= 0
f = 1 MHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
V
DS
- Drain Source V oltage ( V )
6
8 10 12 14 16 18 20 22
96 12165
C
–
o
V
= 4 V
f = 1 MHz
0
2
4
6
8
10
12
14
16
18
0
1
2
3
4
5
6
7
8
9
10
Re (y
11
) ( mS )
96 12166
I
1
V
DS
= 15 V
V
= 4 V
I
= 5...20 mA
f = 50...700 MHz
f =700 MHz
600 MHz
500 MHz
400 MHz
300 MHz
200 MHz
100 MHz
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