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參數(shù)資料
| 型號： | BF961B |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 160K |
| 代理商： | BF961B |
www.vishay.com
2
Document Number 85002
Rev. 1.5, 25-Nov-04
VISHAY
BF961
Vishay Semiconductors
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source breakdown
voltage
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current ± V
G1S
= 5 V, V
G2S
= V
DS
= 0
Gate 2 - source leakage current ± V
G2S
= 5 V, V
G1S
= V
DS
= 0
Drain current
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz
Parameter
Forward transadmittance
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
Test condition
Part
Symbol
V
(BR)DS
Min
20
Typ.
Max
Unit
V
I
D
= 10
μ
A, - V
G1S
= - V
G2S
= 4 V
± I
G1S
= 10 mA, V
G2S
= V
DS
= 0
± V
(BR)G1SS
8
14
V
± I
G2S
= 10 mA, V
G1S
= V
DS
= 0
± V
(BR)G2SS
8
14
V
± I
G1SS
± I
G2SS
I
DSS
I
DSS
I
DSS
- V
G1S(OFF)
100
nA
100
nA
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V BF961
4
20
mA
BF961A
4
10.5
mA
BF961B
9.5
20
mA
Gate 1 - source cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V,
I
D
= 20
μ
A
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
μ
A
3.5
V
Gate 2 - source cut-off voltage
- V
G2S(OFF)
3.5
V
Test condition
Symbol
| y
21s
|
C
issg1
C
issg2
C
rss
C
oss
G
ps
Min
12
Typ.
15
Max
Unit
mS
Gate 1 input capacitance
3.7
pF
Gate 2 input capacitance
V
G1S
= 0, V
G2S
= 4 V
1.6
pF
Feedback capacitance
25
fF
Output capacitance
1.6
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
V
G2S
= 4 to - 2 V, f = 200 MHz
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
20
dB
AGC range
G
ps
F
50
dB
Noise figure
1.8
2.5
dB
Figure 1. Total Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
96 12159
P
-
T
t
T
amb
- Ambient Temperature (
°
C )
Figure 2. Drain Current vs. Drain Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
V
DS
– Drain Source Voltage ( V )
6
8 10 12 14 16 18 20 22 24
96 12160
I
D
V
G1S
= 0.6 V
0.4 V
0.2 V
0
–0.2 V
–0.4 V
–0.6 V
–0.8 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF963 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-103 |
| BF964 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF964S | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF964SA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR |
| BF964SB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR |
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