參數(shù)資料
型號(hào): BF861CT/R
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 11/13頁(yè)
文件大?。?/td> 73K
代理商: BF861CT/R
9397 750 13395
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 24 September 2004
7 of 13
Philips Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
VDS =8V.
(1) VGS =0V.
(2) VGS = 200 mV.
(3) VGS = 400 mV.
(4) VGS = 600 mV.
(5) VGS = 800 mV.
(6) VGS = 1V.
Fig 10. Typical input characteristics; BF861C.
Fig 11. Typical output characteristics; BF861C.
VDS =8V.
f = 1 MHz.
VDS =8V.
(1) ID = 10 mA.
(2) ID = 1 mA.
(3) ID = 0.1 mA.
(4) ID =IGSS.
Fig 12. Input and reverse transfer capacitance as
functions of gate-source voltage; typical
values.
Fig 13. Gate current as a function of drain-gate
voltage; typical values.
VGS (V)
2.5
0
0.5
1.5
1
2
mbd469
8
12
4
16
20
ID
(mA)
0
VDS (V)
010
8
46
2
mbd470
8
12
4
16
20
ID
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
VGS (V)
80
2
6
4
mbd471
4
6
2
8
10
Cis, Crs
(pF)
0
Crs
Cis
mbd472
IG
(nA)
102
104
103
10
1
101
102
105
VDG (V)
025
20
10
15
5
(1)
(2)
(3)
(4)
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