參數(shù)資料
型號(hào): BF840
廠商: NXP Semiconductors N.V.
元件分類(lèi): 功率晶體管
英文描述: NPN medium frequency transistor
中文描述: NPN中頻晶體管
封裝: BF840<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BF840<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 94K
代理商: BF840
2004 Jan 13
2
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BF840
FEATURES
Low current (max. 25 mA)
Low voltage (max. 40 V).
APPLICATIONS
AM mixers
IF amplifiers in AM/FM receivers.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
Note
1.
* = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER
MARKING CODE
(1)
BF840
NC*
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1
Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BF840
plastic surface mounted package; 3 leads
SOT23
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
40
40
4
25
25
250
+150
150
+150
V
V
V
mA
mA
mW
°
C
°
C
°
C
T
amb
25
°
C; note 1
相關(guān)PDF資料
PDF描述
BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF961A N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF961B N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF970 Silicon PNP Planar RF Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF840 /T3 功能描述:兩極晶體管 - BJT TRANS MED FREQ TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BF840 T/R 功能描述:兩極晶體管 - BJT TRANS MED TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BF840,215 功能描述:兩極晶體管 - BJT TRANS MED TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BF840,235 功能描述:兩極晶體管 - BJT TRANS MED FREQ RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BF840215 制造商:NXP Semiconductors 功能描述:BIPOLAR TRANSISTOR MED FREQ NPN 40V