參數(shù)資料
型號： BDW64C
廠商： Power Innovations International, Inc.
英文描述： PNP SILICON POWER DARLINGTONS
中文描述： 進(jìn)步黨穎電DARLINGTONS
文件頁數(shù)： 1/6頁
文件大?。?/td> 146K
代理商： BDW64C
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
AUGUST 1978 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with
BDW63, BDW63A, BDW63B, BDW63C and
BDW63D
G
60 W at 25°C Case Temperature
G
6 A Continuous Collector Current
G
Minimum h
FE
of 750 at 3 V, 2 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
V
CBO
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-6
-0.1
60
2
50
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
V
CEO
V
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
V
EBO
I
C
I
B
P
tot
P
tot
LI
C
2
T
j
T
stg
T
A
V
A
A
W
W
mJ
°C
°C
°C
-65 to +150
-65 to +150
-65 to +150
相關(guān)PDF資料
PDF描述
BDW64D PNP SILICON POWER DARLINGTONS
BDW73A NPN SILICON POWER DARLINGTONS
BDW73B NPN SILICON POWER DARLINGTONS
BDW73C NPN SILICON POWER DARLINGTONS
BDW73 NPN SILICON POWER DARLINGTONS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BDW64C-S 功能描述:達(dá)林頓晶體管 100V 6A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW64D 功能描述:達(dá)林頓晶體管 60W 6A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW64D-S 功能描述:達(dá)林頓晶體管 120V 6A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW64-S 功能描述:達(dá)林頓晶體管 100V 6A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW73 功能描述:達(dá)林頓晶體管 80W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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