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參數(shù)資料
| 型號： | BDW73 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON POWER DARLINGTONS |
| 中文描述： | NPN硅功率DARLINGTONS |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 111K |
| 代理商： | BDW73 |
BDW73, BDW73A, BDW73B, BDW73C, BDW73D
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
AUGUST 1978 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with
BDW74, BDW74A, BDW74B, BDW74C and
BDW74D
G
80 W at 25°C Case Temperature
G
8 A Continuous Collector Current
G
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDW73
BDW73A
BDW73B
BDW73C
BDW73D
BDW73
BDW73A
BDW73B
BDW73C
BDW73D
V
CBO
45
60
80
100
120
45
60
80
100
120
5
8
0.3
80
2
75
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
V
CEO
V
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
V
EBO
I
C
I
B
P
tot
P
tot
LI
C
2
T
j
T
stg
T
A
V
A
A
W
W
mJ
°C
°C
°C
-65 to +150
-65 to +150
-65 to +150
相關PDF資料 |
PDF描述 |
|---|---|
| BDW73D | NPN SILICON POWER DARLINGTONS |
| BDW74 | PNP SILICON POWER DARLINGTONS |
| BDW74 | PNP SILICON POWER DARLINGTONS |
| BDW74A | PNP SILICON POWER DARLINGTONS |
| BDW74B | PNP SILICON POWER DARLINGTONS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BDW73A | 功能描述:達林頓晶體管 80W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDW73A-S | 功能描述:達林頓晶體管 120V 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDW73B | 功能描述:達林頓晶體管 80W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDW73B-S | 功能描述:達林頓晶體管 80V 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDW73C | 功能描述:達林頓晶體管 80W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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