參數(shù)資料
型號(hào)： BDW63C
廠商： Power Innovations International, Inc.
英文描述： NPN SILICON POWER DARLINGTONS
中文描述： NPN硅功率DARLINGTONS
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 144K
代理商： BDW63C
BDW63, BDW63A, BDW63B, BDW63C, BDW63D
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
AUGUST 1978 - REVISED MARCH 1997
Copyright 1997 Power Innovations Limited, UK
G
Designed for Complementary Use with
BDW64, BDW64A, BDW64B, BDW64C and
BDW64D
G
60 W at 25°C Case Temperature
G
6 A Continuous Collector Current
G
Minimum h
FE
of 750 at 3 V, 2 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDW63
BDW63A
BDW63B
BDW63C
BDW63D
BDW63
BDW63A
BDW63B
BDW63C
BDW63D
V
CBO
45
60
80
100
120
45
60
80
100
120
5
6
0.1
60
2
50
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
V
CEO
V
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
V
EB
I
C
I
B
P
tot
P
tot
LI
C
2
T
j
T
stg
T
A
V
A
A
W
W
mJ
°C
°C
°C
-65 to +150
-65 to +150
-65 to +150
相關(guān)PDF資料
PDF描述
BDW63D NPN SILICON POWER DARLINGTONS
BDW64 PNP SILICON POWER DARLINGTONS
BDW64A PNP SILICON POWER DARLINGTONS
BDW64B ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
BDW64C PNP SILICON POWER DARLINGTONS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BDW63C-S 功能描述:達(dá)林頓晶體管 80V 6A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW63D 功能描述:達(dá)林頓晶體管 60W 6A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW63D-S 功能描述:達(dá)林頓晶體管 120V 6A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW63-S 功能描述:達(dá)林頓晶體管 80V 6A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW64 功能描述:達(dá)林頓晶體管 60W 6A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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