參數(shù)資料
型號(hào): BD9153MUV-E2
廠商: Rohm Semiconductor
文件頁(yè)數(shù): 11/21頁(yè)
文件大?。?/td> 630K
描述: IC REG TRPL BCK/LINEAR 24VQFN
特色產(chǎn)品: CMOS LDO Regulators
標(biāo)準(zhǔn)包裝: 1
拓?fù)洌?/td> 降壓(降壓)同步(2),線性(LDO)(1)
功能: 任何功能
輸出數(shù): 3
頻率 - 開(kāi)關(guān): 1MHz
電壓/電流 - 輸出 1: 1.8 V ~ 3.3 V,1.5A
電壓/電流 - 輸出 2: 0.8 V ~ 2.5 V,1.5A
電壓/電流 - 輸出 3: 控制器
帶 LED 驅(qū)動(dòng)器: 無(wú)
帶監(jiān)控器: 無(wú)
帶序列發(fā)生器: 無(wú)
電源電壓: 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-VFQFN 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝: 24-VQFN
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: BD9153MUV-E2DKR
Technical Note
 
11/18 
www.rohm.com
2009.08 - Rev.A
?2009 ROHM Co., Ltd. All rights reserved.
BD9153MUV 
?SPAN class="pst BD9153MUV-E2_2471427_7">Consideration on permissible dissipation and heat generation 
As BU9153MUV functions with high efficiency without significant heat generation in most applications, no special
consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including
lower input voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat
generation must be carefully considered.
 
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
(Example) VCC=5V, VOUT1=3.3V, VOUT2=1.2V, RONH=170m&, RONL=130m&
IOUT=1.5A, for example,
D1=VOUT1/VCC=3.3/5=0.66
D2=VOUT2/VCC=1.2/5=0.24
RON1=0.66?.170+(1-0.66)?.130
=0.1122+0.0442
=0.1564[&]
RON2=0.24?.170+(1-0.24)?.130
=0.0408+0.0988
=0.1397[&]
 
P=1.5
2
?.1564+1.5
2
?.1397=0.666[W]
 
As RONH
 
is greater than RONL in BU9153MUV, the dissipation increases as the ON duty becomes greater. With the
consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
Fig.34 Thermal derating curve
 (VQFN024V4040)
P=IOUT
2
識(shí)ON
RON=D識(shí)ONP+(1-D)RONN
 
DON duty (=VOUT/VCC)
RONHON resistance of Highside MOS FET
RONLON resistance of Lowside MOS FET
IOUTOutput current
 
 
 
Ambient temperature :Ta []
0     25
SW1
75    100     125   150
0
2.0
3.0
4.0
a2.2W
`3.56W
1.0
b0.69W
c0.34W
105
 
` 4 layers (copper foil area : 5505mm
2
)
  (Copper foil in each layers)
竕-a=35.1/W
a 4 layers (copper foil area : 10.29mm
2
)
  (Copper foil in 2nd and 3rd layers)
  竕-a=56.8/W
b 1 layer (Copper foil area : 0mm
2
)
  竕-a=181.2/W
cIC only
  竕-a=367.6/W
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