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參數(shù)資料
| 型號： | BD707 |
| 廠商： | 意法半導體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補性的芯片功率晶體管 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 97K |
| 代理商： | BD707 |
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
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相關PDF資料 |
PDF描述 |
|---|---|
| BD708 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD709 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD711 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD712 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD905FI | Power Linear and Switching Applications(硅平面外延工藝NPN功率晶體管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BD708 | 功能描述:兩極晶體管 - BJT PNP Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD709 | 功能描述:兩極晶體管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD70GA3MEFJ-ME2 | 制造商:ROHM Semiconductor 功能描述:IC REG LDO 7.0V 0.3A 8HTSOP |
| BD70GA3WEFJ-E2 | 功能描述:低壓差控制器 - LDO LDO Reg Pos 7.0V 0.3A RoHS:否 制造商:Micrel 最大輸入電壓:5.5 V 輸出電壓:Adjustable 輸出電流:10 mA 負載調節(jié): 輸出類型:Adjustable, Fixed 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-6 |
| BD70GA3WEFJ-TR | 制造商:ROHM 制造商全稱:Rohm 功能描述:300mA Variable / Fixed Output LDO Regulators |
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