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參數(shù)資料
| 型號： | BD239C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NPN SILICON POWER TRANSISTOR |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | BD239C |
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BD239C
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相關(guān)PDF資料 |
PDF描述 |
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| BD240C | Complementary Silicon Power Transistors(互補硅功率晶體管) |
| BD241BFI | Complementary Silicon Power Transistors(互補硅功率晶體管) |
| BD242BFI | Complementary Silicon Power Transistors(互補硅功率晶體管) |
| BD241CFP | Complementary Silicon Power Transistor(互補硅功率晶體管) |
| BD241C | COMPLEMENTARY SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD239C | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220 |
| BD239C_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NPN power transistor |
| BD239C-S | 功能描述:兩極晶體管 - BJT 100V 2A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD239CTU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD239D | 功能描述:兩極晶體管 - BJT 30W NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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