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| 型號： | BCX55-10 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 封裝： | BCP55<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,;BCP55<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,;BCP5 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 153K |
| 代理商： | BCX55-10 |
BC637_BCP55_BCX55_7
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 25 June 2007
9 of 15
NXP Semiconductors
BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
7.
Characteristics
[1]
Pulse test: t
p
≤
300
μ
s;
δ
= 0.02.
FR4 PCB, mounting pad for collector 6 cm
2
Fig 9.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa816
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
1
10
5
10
10
2
10
4
10
2
10
1
t
p
(s)
10
3
10
3
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
1.0
Table 8.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off
current
Characteristics
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°
C
V
EB
= 5 V; I
C
= 0 A
Min
-
-
Typ
-
-
Max
100
10
Unit
nA
μ
A
I
EBO
emitter-base cut-off
current
DC current gain
-
-
100
nA
h
FE
V
CE
= 2 V
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
V
CE
= 2 V
I
C
= 150 mA
I
C
= 150 mA
I
C
= 500 mA; I
B
= 50 mA
63
63
-
-
-
-
250
-
[1]
40
DC current gain
h
FE
selection -10
h
FE
selection -16
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
63
100
-
-
-
160
250
500
V
CEsat
[1]
-
mV
V
BE
C
c
V
CE
= 2 V; I
C
= 500 mA
V
CB
= 10 V;I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
= 5 V; I
C
= 50 mA;
f = 100 MHz
[1]
-
-
6
1
-
V
pF
-
f
T
transition frequency
100
180
-
MHz
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|---|---|
| BCX55-10 T/R | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX55-10,115 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX55-10115 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 60V 1A SOT89 |
| BCX55-10-BG | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
| BCX55-10E6327 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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