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參數(shù)資料
| 型號(hào)： | BCX52-10-AG |
| 廠商： | Zetex Semiconductor |
| 英文描述： | Wire-To-Board Connector; No. of Contacts:50; Pitch Spacing:0.05"; No. of Rows:2; Mounting Type:Header; Gender:Female; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| 中文描述： | SOT89進(jìn)步黨硅平面中功率晶體管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | BCX52-10-AG |
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPE –
%
BCX51 – BCX54
BCX52 – BCX55
BCX53 – BCX56
PARTMARKING DETAILS –
BCX51
BCX51-10– AC
BCX51-16– AD
– AA
BCX52
BCX52-10– AG
BCX52-16– AM
– AE
BCX53
BCX53-10– AK
BCX53-16– AL
– AH
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SY MBOL
BCX51
BCX52
BCX53
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-45
-60
-100
V
Collector-Emitter Voltage
-45
-60
-80
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-1.5
A
Continuous Collector Current
-1
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
S YMBOL
MIN.
1
W
-65 to +150
°C
TYP.
MAX . UNIT
CONDITIONS.
I
C
=-100
μ
A
I
C
=-100
μ
A
I
C
=-100
μ
A
I
C
=-10mA*
I
C
=-10mA*
I
C
=-10mA*
I
E
=-10
μ
A
Collector-Base
Breakdown
Voltage
BCX 53
BCX 52
BCX 51
V
(BR)CBO
-100
-60
-45
V
V
V
Collector-Emitter BCX 53
Breakdown
Voltage
BCX 52
BCX 51
V
(BR)CEO
-80
-60
-45
V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
Collector Cut-Off Current
I
CBO
-0.1
-20
μ
A
μ
A
nA
V
CB
=-30V
V
CB
=-30V, T
amb
=150°C
V
EB
=-4V
I
C
=-500mA, I
B
=-50mA*
Emitter Cut-Off Current
I
EBO
V
CE(sat)
-20
Collector-Emitter
Saturation Voltage
-0.5
V
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.0
V
I
C
=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
-10
-16
25
40
25
63
100
250
160
250
I
C
=-5mA, V
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
=-50mA, V
CE
=-10V,
f=100MHz
Transition Frequency
f
T
150
MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
BCX51
BCX52
BCX53
C
C
B
E
SOT89
3 - 34
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCX52-16-AM | PC Board Connector; No. of Contacts:50; Pitch Spacing:0.05"; No. of Rows:2; Contact Termination:IDC; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| BCX52-AE | SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
| BCX5316 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| BD239D | NPN SILICON POWER TRANSISTORS |
| BD239E | NPN SILICON POWER TRANSISTORS |
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