參數(shù)資料
型號: BCWBLT1
廠商: 樂山無線電股份有限公司
英文描述: General Purpose Transistors(NPN Silicon)
中文描述: 通用晶體管(NPN硅)
文件頁數(shù): 6/6頁
文件大?。?/td> 315K
代理商: BCWBLT1
LESHAN RADIO COMPANY, LTD.
M9–6/6
T
J
, JUNCTION TEMPERATURE (°C)
Figure 19A.
V
CC
= 30 Vdc
I
C
,
10
4
10
3
10
2
10
1
10
0
10
–1
10
–2
–4
–2
0
+20
+40
+60
+80
+100
+120
+140
+160
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 Vdc
I
CEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the
model as shown in Figure 19A. Using the model and the device
thermal response the normalized effective transient thermal re-
sistance of Figure 19 was calculated for various duty cycles.
To find Z
θ
JA(t)
, multiply the value obtained from Figure 19 by
the steady state value R
θ
JA
.
Example:
The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P
(pk)
x R
θ
JA
= 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
t, TIME (ms)
Figure 19. Thermal Response
r
D = 0.5
0.02
0.05
0.1
0.2
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1
/ t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN–569)
Z
θ
JA(t)
= r(t) R
θ
JA
T
J(pk)
– T
A
= P
(pk)
Z
θ
JA(t)
FIGURE 19A
P
(pk)
t
2
t
1
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k
100k
BCW60ALT1 BCW60BLT1 BCW60DLT1
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 20.
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
4.0
6.0
8.0
10
20
40
The safe operating area curves indicate I
C
–V
CE
limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 20 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
<
150°C. T
J(pk)
may be calculated from the data in Figure 19. At high case
or ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
T
A
= 25°C
T
C
= 25°C
T
J
= 150°C
100
μ
s
1.0 ms
1.0 s
10
μ
s
dc
dc
I
C
400
200
100
60
40
20
10
6.0
4.0
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