參數(shù)資料
型號: BCV62C
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: PNP general-purpose double transistors
中文描述: PNP 通用雙晶體管
封裝: BCV62<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 2002,;BCV62<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 20
文件頁數(shù): 8/14頁
文件大?。?/td> 145K
代理商: BCV62C
BCV62
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NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
8 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
8. Test information
I
C1
/I
E2
= 1.3
Fig 13. Maximum collector-emitter voltage as a function of emitter resistor
(see
Figure 15
)
mbk083
0
10
1
30
10
20
1
V
CE1max
(V)
10
R
E
(
Ω
)
10
2
I
E2
=
1 mA
5 mA
10 mA
50 mA
Fig 14. Test circuit current matching
Fig 15. Current mirror with emitter resistors
006aaa841
A
VCE1
IC1
TR2
TR1
IE2 =
constant
1
2
4
3
006aac001
A
VCE1
IC1
TR2
TR1
IE2 =
constant
1
2
4
3
RE
RE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BCV62C T/R 制造商:NXP Semiconductors 功能描述:Trans GP BJT PNP 30V 0.1A 4-Pin(3+Tab) SOT-143B T/R
BCV62C,215 功能描述:兩極晶體管 - BJT PNP 30V 100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BCV62C 制造商:Infineon Technologies AG 功能描述:TRANSISTOR DUAL PNP SOT-143
BCV62C215 制造商:NXP Semiconductors 功能描述:BJT ARRAY DUAL PNP -30V -100MA 4-SOT
BCV62CE6327 制造商:Rochester Electronics LLC 功能描述:- Bulk