參數(shù)資料
型號(hào)： BC860C
廠商： DIOTEC SEMICONDUCTOR AG
元件分類(lèi)： 功率晶體管
英文描述： Surface mount Si-Epitaxial PlanarTransistors
中文描述： 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 46K
代理商： BC860C
1999 May 28
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC859; BC860
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
V
BEsat
decreases by about
1.7 mV/K with increasing temperature.
V
BE
decreases by about
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
1
MAX.
15
4
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
2 mA; V
CE
=
5 V;
see Figs 2 and 3
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC859B; BC860B
BC859C; BC860C
collector-emitter saturation
voltage
220
420
600
75
250
700
850
650
4.5
10
475
800
300
650
750
820
V
CEsat
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100 mA; I
B
=
5 mA
I
C
=
10 mA; I
B
=
0.5 mA; note 1
I
C
=
100 mA; I
B
=
5 mA; note 1
I
C
=
2 mA; V
CE
=
5 V; note 2
I
C
=
10 mA; V
CE
=
5 V; note 2
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
500 mV; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz 100
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 30 Hz to 15 kHz
mV
mV
mV
mV
mV
mV
pF
pF
MHz
V
BEsat
base-emitter saturation voltage
V
BE
base-emitter voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
BC859B; BC860B;
BC859C; BC860C
noise figure
BC859B; BC860B;
BC859C; BC860C
4
dB
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
4
dB
相關(guān)PDF資料
PDF描述
BC860 EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
BC860AL Automotive Fuse; Current Rating:15A; Voltage Rating:32V; Fuse Type:Fast Acting; Fuse Terminals:Blade; Length:18.54mm; Series:257; Fuse Size/Group:18.54 x 19.05 x 5.08mm
BC859AL FUSE 3.15A, 250V 5X20MM FAST BLO
BC860CL Leaded Cartridge Fuse; Current Rating:700mA; Voltage Rating:125V; Fuse Terminals:Radial Lead; Fuse Type:Fast Acting; Voltage Rating:125V; Body Material:Plastic Cap; Diameter:6.35mm; Leaded Process Compatible:Yes; Length:8.89mm RoHS Compliant: Yes
BC860BL TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | SOT-23
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BC860C /T3 功能描述:兩極晶體管 - BJT TRANS GP TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC860C,215 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC860C,235 功能描述:兩極晶體管 - BJT TRANS GP TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC860C 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP SOT-23
BC860C/T1 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR SMD KLEINSIGNAL UNIVERSAL
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