參數(shù)資料
型號： BC857CT-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/2頁
文件大?。?/td> 52K
代理商： BC857CT-7
DS30275 Rev. 2 - 2
2 of 2
BC857AT, BT, CT
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 2)
V
(BR)CBO
-50
—
—
V
I
C
= 10 A, I
B
= 0
I
C
= 10mA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 2)
V
(BR)CEO
-45
—
—
V
Emitter-Base Breakdown Voltage (Note 2)
V
(BR)EBO
-5
—
—
V
I
E
= 1 A, I
C
= 0
DC Current Gain (Note 2)
Current Gain A
B
C
h
FE
125
220
420
—
290
520
250
475
800
—
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage (Note 2)
V
CE(SAT)
—
—
—
-300
-650
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 2)
V
BE(SAT)
—
—
-700
-900
—
—
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage (Note 2)
V
BE(ON)
-600
—
—
—
-750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current (Note 2)
I
CBO
—
—
—
—
-15
-4.0
NA
μA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Gain Bandwidth Product
f
T
100
—
—
MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Output Capacitance
C
OB
—
—
4.5
pF
V
CB
= -10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
I
C
= -0.2mA, V
CE
= -5.0Vdc,
R
S
= 2.0K , f = 1.0KHz,
BW = 200Hz
Notes:
2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details: go to ourwebsite at http://www.diodes.com/datasheets/ap02007.pdf.
@ T
A
= 25°C unless otherwise specified
N
Ordering Information
(Note 3)
Device
Packaging
Shipping
BC857AT-7
SOT-523
3000/Tape & Reel
BC857BT-7
SOT-523
3000/Tape & Reel
BC857CT-7
SOT-523
3000/Tape & Reel
XXYM
Marking Information
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Date Code Key
XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BC857CT-7-F 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC857CTA 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC857CTC 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC857C-TP 功能描述:兩極晶體管 - BJT PNP -50V -100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC857CTT1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor PNP Silicon
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