參數(shù)資料
型號： BC857CDW1T1
廠商： 樂山無線電股份有限公司
英文描述： Dual General Purpose Transistors(PNP Duals)
中文描述： 雙通用晶體管（民進黨對偶）
文件頁數(shù)： 5/5頁
文件大?。?/td> 164K
代理商： BC857CDW1T1
LESHAN RADIO COMPANY, LTD.
BC856b–5/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
SINGLE PULSE
t
1
Z
θ
JA
(t) = r(t) R
θ
JA
R
θ
JA
= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θ
JC
(t)
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
D=0.5
0.2
0.1
0.05
0.02
0.01
t, TIME (ms)
Figure 13. Thermal Response
0
1.0
10
100
1.0K
10K
100K
1.0M
1.0
0.1
0.01
0.001
I
C
,
r
R
-200
-100
-50
-10
-5.0
-2.0
-1.0
-5.0
-10
-30
-45
-65
-100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate I
C
–V
CE
limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
<
150°C. T
J
(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
相關(guān)PDF資料
PDF描述
BC858CDW1T1 Dual General Purpose Transistors(PNP Duals)
BC857BDW1T1 ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
BC858U High Speed CMOS Logic Phase-Locked-Loop with VCO 16-SOIC -55 to 125
BCD 100mA SILICON CARTRIDGE RECTIFIERS
BCD10 100mA SILICON CARTRIDGE RECTIFIERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BC857CDW1T1G 功能描述:兩極晶體管 - BJT 100mA 50V Dual PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC857CE6327 制造商:Rochester Electronics LLC 功能描述:- Bulk
BC857CE-6327 制造商:Siemens 功能描述:100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
BC857CE6327HTSA1 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANS PNP AF 45V SOT-23
BC857CE6327T 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R
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