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參數(shù)資料
| 型號(hào)： | BC856AT |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP general purpose transistors |
| 中文描述： | PNP通用型晶體管 |
| 封裝： | BC856AT<SOT416 (SC-75)|<<http://www.nxp.com/packages/SOT416.html<1<week 17, 2003,;BC856BT<SOT416 (SC-75)|<<http://www.nxp.com/packages/SOT416.html<1<week 17, 2003,; |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 147K |
| 代理商： | BC856AT |
NXP Semiconductors
Contact information
For additional information please visit:
http://www.nxp.com
For sales offices addresses send e-mail to:
salesaddresses@nxp.com
NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands
613514/03/pp9
Date of release: 2000 Nov 15
Document order number: 9397 750 07525
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC856BT | PNP general purpose transistors |
| BC856UF | PNP Silicon Transistor (General purpose application Switching application) |
| BC856W | PNP general purpose transistors |
| BC857W | PNP general purpose transistors |
| BC856 | General Purpose Transistor PNP Silicon(-65V通用型硅PNP晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC856A-T | 功能描述:兩極晶體管 - BJT Transistor PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC856AT T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC856AT,115 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC856AT/R | 制造商:NXP Semiconductors 功能描述:100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| BC856ATA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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