參數(shù)資料
型號: BC846
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: 65 V, 100 mA NPN general-purpose transistors
中文描述: 65伏,100毫安NPN型通用晶體管
封裝: BC846<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BC846A<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;B
文件頁數(shù): 7/14頁
文件大?。?/td> 373K
代理商: BC846
BC846_BC546_SER_7
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
7 of 14
NXP Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
V
CE
= 5 V
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
55
°
C
Fig 5.
Selection B: DC current gain as a function of
collector current; typical values
V
CE
= 5 V
(1) T
amb
=
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
Fig 6.
Selection B: Base-emitter voltage as a function
of collector current; typical values
I
C
/I
B
= 20
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
55
°
C
Fig 7.
Selection B: Collector-emitter saturation
voltage as a function of collector current;
typical values
I
C
/I
B
= 10
(1) T
amb
=
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
Fig 8.
Selection B: Base-emitter saturation voltage
as a function of collector current; typical
values
mgt727
10
1
1
10
10
2
10
3
I
C
(mA)
0
600
h
FE
500
400
300
200
100
(1)
(2)
(3)
0
10
2
1200
1000
800
600
400
200
mgt728
10
1
1
10
10
2
10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
10
4
10
3
10
2
10
10
1
mgt729
1
10
10
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
mgt730
10
1
1
10
10
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
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