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參數(shù)資料
| 型號： | BC846 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | 65 V, 100 mA NPN general-purpose transistors |
| 中文描述： | 65伏，100毫安NPN型通用晶體管 |
| 封裝： | BC846<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BC846A<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;B |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 373K |
| 代理商： | BC846 |
BC846_BC546_SER_7
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
5 of 14
NXP Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
7.
Characteristics
Table 8.
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-base cut-off
current
[1]
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
[2]
[3]
Characteristics
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°
C
V
EB
= 5 V; I
E
= 0 A
Min
-
-
Typ
-
-
Max
15
5
Unit
nA
μ
A
I
EBO
emitter-base cut-off
current
DC current gain
h
FE
group A
h
FE
group B
DC current gain
h
FE
group A
h
FE
group B
collector-emitter
saturation voltage
-
-
100
nA
h
FE
V
CE
= 5 V; I
C
= 10
μ
A
V
CE
= 5 V; I
C
= 10
μ
A
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
-
-
110
110
200
-
180
290
-
180
290
90
200
760
900
660
-
-
-
-
450
220
450
200
400
-
-
700
770
-
V
CEsat
mV
mV
mV
mV
mV
mV
MHz
[1]
-
V
BEsat
base-emitter
saturation voltage
[2]
-
[2]
-
V
BE
base-emitter voltage
[3]
580
[3]
-
f
T
transition frequency
100
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
emitter capacitance
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
noise figure
I
C
= 200
μ
A; V
CE
= 5 V;
R
S
= 2 k
Ω
; f = 1 kHz;
B = 200 Hz
-
2
3
pF
C
e
-
11
-
pF
NF
-
2
10
dB
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