參數(shù)資料
型號(hào)： BC648CDW1T1
廠商： 樂(lè)山無(wú)線(xiàn)電股份有限公司
英文描述： Dual General Purpose Transistors(NPN Duals)
中文描述： 雙通用晶體管（npn型對(duì)偶）
文件頁(yè)數(shù)： 5/5頁(yè)
文件大?。?/td> 155K
代理商： BC648CDW1T1
LESHAN RADIO COMPANY, LTD.
BC846b–5/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
SINGLE PULSE
t
1
Z
θ
JA
(t) = r(t) R
θ
JA
R
θ
JA
= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θ
JC
(t)
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
D=0.5
0.2
0.1
0.05
0.02
0.01
t, TIME (ms)
Figure 11. Thermal Response
0
1.0
10
100
1.0K
10K
100K
1.0M
1.0
0.1
0.01
0.001
I
C
,
r
R
-200
-100
-50
-10
-5.0
-2.0
-1.0
-5.0
-10
-30
-45
-65
-100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
The safe operating area curves indicate I
C
–V
CE
limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 12 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
<
150°C. T
J
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
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