參數(shù)資料
型號(hào)： BC648CDW1T1
廠商： 樂(lè)山無(wú)線(xiàn)電股份有限公司
英文描述： Dual General Purpose Transistors(NPN Duals)
中文描述： 雙通用晶體管（npn型對(duì)偶）
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 155K
代理商： BC648CDW1T1
LESHAN RADIO COMPANY, LTD.
BC846b–2/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
BC846 Series
BC847 Series
BC848 Series
Collector–Emitter Breakdown Voltage
(I
C
= 10
μ
A, V
EB
= 0)
BC846 Series
BC847 Series
BC848 Series
Collector–Base Breakdown Voltage
(I
C
= 10
μ
A)
BC846 Series
BC847 Series
BC848 Series
Emitter–Base Breakdown Voltage
(I
E
= 1.0
μ
A)
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
Symbol
Min
Typ
Max
Unit
V
(BR)CEO
V
65
45
30
—
—
—
—
—
—
V
(BR)CES
V
80
50
30
—
—
—
—
—
—
V
(BR)CBO
V
80
50
30
—
—
—
—
—
—
V
(BR)EBO
V
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
15
5.0
I
CBO
nA
μ
A
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
μ
A, V
CE
= 5.0 V)
h
FE
—
BC846B, BC847B, BC848B
BC847C, BC848C
—
—
150
270
—
—
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
200
420
—
—
—
—
580
—
290
520
—
—
0.7
0.9
660
—
450
800
0.25
0.6
—
—
700
770
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector–Emitter Saturation Voltage
( I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base–Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
V
CE(sat)
V
V
BE(sat)
V
V
BE(on)
mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure (I
C
= 0.2 mA,
V
CE
= 5.0 V
dc
, R
S
= 2.0 k
,
f = 1.0 kHz, BW = 200 Hz)
f
T
100
—
—
MHz
C
obo
NF
—
—
4.5
pF
dB
BC846B, BC847B, BC848B
BC847C, BC848C
—
—
—
—
10
4.0
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