參數(shù)資料
型號: BAW56M
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: High-speed switching diodes
中文描述: 高速開關(guān)二極管
封裝: BAV756S<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,;BAW56<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁數(shù): 4/15頁
文件大小: 108K
代理商: BAW56M
BAV756S_BAW56_SER_5
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
4 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
[1]
T
j
= 25
°
C prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
[3]
Reflow soldering is the only recommended soldering method.
[4]
Single diode loaded.
6.
Thermal characteristics
I
FRM
repetitive peak forward
current
non-repetitive peak forward
current
-
500
mA
I
FSM
square wave
t
p
= 1
μ
s
t
p
= 1 ms
t
p
= 1 s
[1]
-
-
-
4
1
0.5
A
A
A
P
tot
total power dissipation
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
[2]
T
s
= 60
°
C
T
amb
25
°
C
T
amb
25
°
C
T
s
= 60
°
C
T
s
= 90
°
C
T
amb
25
°
C
-
-
350
250
250
350
170
200
mW
mW
mW
mW
mW
mW
[3]
-
-
[4]
-
-
Per device
I
F
forward current
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
junction temperature
ambient temperature
storage temperature
T
s
= 60
°
C
T
amb
25
°
C
T
amb
25
°
C
T
s
= 60
°
C
T
s
= 90
°
C
T
amb
25
°
C
-
-
-
-
-
-
-
65
65
100
125
75
100
75
130
150
+150
+150
mA
mA
mA
mA
mA
mA
°
C
°
C
°
C
T
j
T
amb
T
stg
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Table 7.
Symbol
Per diode
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to ambient
BAW56
BAW56M
BAW56W
in free air
[1]
-
-
-
-
500
500
625
K/W
K/W
K/W
[2]
-
-
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