參數(shù)資料
型號(hào)： BAW56M
廠商： NXP Semiconductors N.V.
元件分類(lèi)： 參考電壓二極管
英文描述： High-speed switching diodes
中文描述： 高速開(kāi)關(guān)二極管
封裝： BAV756S<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,;BAW56<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁(yè)數(shù)： 13/15頁(yè)
文件大?。?/td> 108K
代理商： BAW56M
BAV756S_BAW56_SER_5
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
13 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
12. Revision history
Table 10.
Document ID
BAV756S_BAW56_SER_5 20071126
Revision history
Release date
Data sheet status
Product data sheet
Change notice
-
Supersedes
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
Modifications:
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BAW56M added
Section 1.1 “General description”
: amended
Table 1 “Product overview”
: added
Table 2 “Quick reference data”
: added
Table 6 “Limiting values”
: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of V
RRM
maximum value from 85 V to 90 V
Table 6 “Limiting values”
: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of V
R
maximum value from 75 V to 90 V
Table 8 “Characteristics”
: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of I
R
condition V
R
from 75 V to 80 V for T
j
= 25
°
C
Table 8 “Characteristics”
: for BAV756S change of I
R
maximum value from 2.5
μ
A to 0.5
μ
A
for T
j
= 25
°
C
Table 8 “Characteristics”
: for BAW56, BAW56S, BAW56T and BAW56W change of
I
R
maximum value from 1
μ
A to 0.5
μ
A for T
j
= 25
°
C
Table 8 “Characteristics”
: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of I
R
condition V
R
from 75 V to 80 V for T
j
= 150
°
C
Table 8 “Characteristics”
: for BAV756S change of I
R
maximum value from 60
μ
A to 30
μ
A
for I
R
condition V
R
= 25 V; T
j
= 150
°
C
Table 8 “Characteristics”
: for BAV756S change of I
R
maximum value from 100
μ
A to
150
μ
A for T
j
= 150
°
C
Table 8 “Characteristics”
: for BAW56, BAW56S, BAW56T and BAW56W change of
I
R
maximum value from 50
μ
A to 150
μ
A for T
j
= 150
°
C
Section 8 “Test information”
: added
Section 10 “Packing information”
: added
Section 11 “Soldering”
: added
Section 13 “Legal information”
: updated
19971021
Product specification
20030325
Product specification
19971021
Product specification
19971219
Product specification
19990511
Product specification
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
-
-
-
-
-
BAV756S_1
BAW56_3
BAW56S_1
-
BAW56W_3
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