- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384120 > BAV99L-AE3-R (UNISONIC TECHNOLOGIES CO LTD) HIGH CONDUCTANCE ULTRA FAST DIODE PDF資料下載
參數(shù)資料
| 型號： | BAV99L-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HIGH CONDUCTANCE ULTRA FAST DIODE |
| 中文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 107K |
| 代理商： | BAV99L-AE3-R |
BAV99
DIODE
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R601-005,B
2 of 4
ABS OLUT E MAX IMUM RAT INGS *
(Ta = 25
, unless otherwise specified.
)
PARAMETER
SYMBOL
W
IV
I
F(AV)
I
FM
I
FRM
RATINGS
70
200
600
700
1.0
2.0
350
200
+125
-40 ~ +150
UNIT
V
mA
mA
mA
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Non-repetitive Peak
Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
I
FSM
A
SOT-23
SOT-363
mW
mW
Total Device Dissipation
P
D
Junction Temperature
Storage Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Note: 1. These ratings are based on a maximum junction temperature of 150°C
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
T HERMAL DAT A
PARAMETER
SYMBOL
RATINGS
357
625
UNIT
/W
/W
SOT-23
SOT-363
Thermal Resistance Junction to Ambient
θ
JA
ELECT RICAL CHARACT ERIS T ICS
(Ta = 25
,
unless otherwise specified.
)
PARAMETER
SYMBOL
V
R
TEST CONDITIONS
I
R
= 100μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
I
F
= 10mA, t
R
= 20nS
V
R
= 70V
V
R
= 25V, T
a
= 150°C
V
R
= 70V, T
a
= 150°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA, I
RR
= 1.0mA
R
L
= 100
MIN
70
TYP
MAX
715
855
1.0
1.25
1.75
2.5
30
50
1.5
UNIT
V
mV
mV
V
V
V
Breakdown Voltage
Maximum Instantaneous Forward
Voltage
V
FM
Peak Forward Voltage
V
SM
Maximum Instantaneous Reverse
Current
I
RM
μA
Diode Capacitance
C
O
pF
Reverse Recovery Time
t
RR
6.0
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAV99L-AL3-R | HIGH CONDUCTANCE ULTRA FAST DIODE |
| BAV99L-AL6-R | HIGH CONDUCTANCE ULTRA FAST DIODE |
| BAV99L-AN3-R | HIGH CONDUCTANCE ULTRA FAST DIODE |
| BAV99-V-GS08 | Diode Small Signal Switching 70V 0.25A 3-Pin SOT-23 T/R |
| BAV99-V-GS18 | Diode Small Signal Switching 70V 0.25A 3-Pin SOT-23 T/R |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAV99L-AL3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH CONDUCTANCE ULTRA FAST DIODE |
| BAV99L-AL6-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH CONDUCTANCE ULTRA FAST DIODE |
| BAV99L-AN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH CONDUCTANCE ULTRA FAST DIODE |
| BAV99-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:DUAL SURFACE MOUNT SWITCHING DIODE |
| BAV99LT1 | 功能描述:二極管 - 通用，功率，開關(guān) 70V 215mA Dual RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。