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參數(shù)資料
| 型號： | BAV99-V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Switching 70V 0.25A 3-Pin SOT-23 T/R |
| 中文描述： | Diodes (General Purpose, Power, Switching) Dual 70 Volt 250mA 4.5 Amp IFSM |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 86K |
| 代理商： | BAV99-V-GS18 |
BAV99
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 16-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85718
Small Signal Switching Diode, Dual in Series
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes/options:
18/10K per 13
"
reel (8 mm tape), 10K/box
08/3K per 7
"
reel (8 mm tape), 15K/box
FEATURES
Fast switching speed
High conductance
Surface mount package ideally suited for
automatic insertion
Connected in series
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
18109
1
2
3
PARTS TABLE
PART
ORDERING CODE
BAV99-E3-08 or BAV99-E3-18
BAV99-HE3-08 or BAV99-HE3-18
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
BAV99
Dual diodes serial
JE
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
TEST CONDITION
SYMBOL
V
RM
VALUE
100
UNIT
V
V
RRM
= V
RWM
= V
R
70
Peak forward surge current
t
p
= 1 s
t
p
= 1 μs
I
FSM
1
A
4.5
Average forward current
Half wave rectification with resistive load
and f
50 MHz, on ceramic substrate
10 mm x 8 mm x 0.7 mm
On ceramic substrate
10 mm x 8 mm x 0.7 mm
On ceramic substrate
10 mm x 8 mm x 0.7 mm
I
F(AV)
150
mA
Forward current
I
F
250
Power dissipation
P
tot
300
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
On ceramic substrate
10 mm x 8 mm x 0.7 mm
SYMBOL
VALUE
UNIT
Junction ambient
R
thJA
430
K/W
Junction and storage temperature range
Operating temperature range
T
j
= T
stg
T
op
- 55 to + 150
- 55 to + 150
°C
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| BAV99W | 制造商:Infineon Technologies AG 功能描述:DIODE DUAL SOT-323 制造商:NXP Semiconductors 功能描述:DIODE DUAL SOT-323 制造商:NXP Semiconductors 功能描述:DIODE, DUAL, SOT-323 |
| BAV99W /T3 | 功能描述:二極管 - 通用，功率，開關(guān) DIODE SW TAPE-11 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAV99W _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAV99W RVG | 功能描述:DIODE ARRAY GP 85V 150MA SOT323 制造商:taiwan semiconductor corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 二極管配置:1 對串聯(lián) 二極管類型:標準 電壓 - DC 反向（Vr）（最大值）:85V 電流 - 平均整流（Io）（每二極管）:150mA 不同 If 時的電壓 - 正向（Vf:1.25V @ 150mA 速度:小信號 =< 200mA（Io），任意速度 反向恢復(fù)時間（trr）:4ns 不同?Vr 時的電流 - 反向漏電流:1μA @ 75V 工作溫度 - 結(jié):150°C（最大） 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商器件封裝:SOT-323 標準包裝:3,000 |
| BAV99W,115 | 功能描述:二極管 - 通用，功率，開關(guān) SW DBL 75V 150MA HS RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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