參數(shù)資料
型號(hào): BAV10
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: High-speed diode
中文描述: 0.3 A, 60 V, SILICON, SIGNAL DIODE, DO-35
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 6/7頁
文件大?。?/td> 34K
代理商: BAV10
1996 Sep 16
6
Philips Semiconductors
Product specification
High-speed diode
BAV10
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IF
t
output signal
tr
t
tp
10%
90%
VR
input signal
V = VR
F
S
S
IF
D.U.T.
Ri
SAMPLING
OSCILLOSCOPE
MGA881
(1) I
R
= 40 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
Input signal
: forward pulse duration t
p
= 300 ns; duty factor
δ
= 0.01.
tr
t
tp
10%
90%
I
input
signal
RS
I
Ri
OSCILLOSCOPE
1 k
450
D.U.T.
MGA882
Vfr
t
output
signal
V
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