參數(shù)資料
型號(hào): BAV10
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: High-speed diode
中文描述: 0.3 A, 60 V, SILICON, SIGNAL DIODE, DO-35
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 34K
代理商: BAV10
1996 Sep 16
5
Philips Semiconductors
Product specification
High-speed diode
BAV10
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
(
μ
A)
0
100
Tj (
o
C)
200
3
10
2
10
1
10
2
10
1
MGD011
(1)
(2)
(3)
(1) V
R
= 60 V; maximum values.
(2) V
R
= 60 V; typical values.
(3) V
R
= 30 V; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
°
C.
handbook, halfpage
Cd
(pF)
0
10
20
30
VR (V)
3
1
0
2
MGD002
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