- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385114 > BAS21VD (NXP Semiconductors N.V.) High-voltage switching diodes PDF資料下載
參數(shù)資料
| 型號： | BAS21VD |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High-voltage switching diodes |
| 中文描述： | 高壓開關(guān)二極管 |
| 封裝： | BAS21VD<SOT457 (TSOP6)|<<http://www.nxp.com/packages/SOT457.html<1<week 22, 2003,;BAS21VD<SOT457 (TSOP6)|<<http://www.nxp.com/packages/SOT457.html<1<Always Pb-free, |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 130K |
| 代理商： | BAS21VD |
BAS21VD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
3 of 12
NXP Semiconductors
BAS21VD
High-voltage switching diodes
[1]
Pulse test: t
p
300
s;
0.02.
T
j
= 25
C prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
[3]
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
Per device; one diode loaded
R
th(j-a)
thermal resistance from
junction to ambient
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3]
Soldering point of cathode tab.
7. Characteristics
Table 7.
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
Per diode
V
F
forward voltage
[1]
Pulse test: t
p
300
s;
0.02.
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
; measured at I
R
= 3 mA.
[2]
Per device; one diode loaded
P
tot
total power dissipation
T
amb
25
C
[3]
-
250
295
150
+150
+150
mW
mW
C
C
C
[4]
-
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
-
65
65
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
in free air
[1]
-
-
-
-
500
425
140
K/W
K/W
K/W
[2]
-
R
th(j-sp)
thermal resistance from
junction to solder point
[3]
-
Characteristics
Conditions
Min
Typ
Max
Unit
I
F
= 100 mA
I
F
= 200 mA
V
R
= 200 V
V
R
= 200 V; T
j
= 150
C
f = 1 MHz; V
R
= 0 V
-
-
-
-
25
-
0.6
16
1
1.25
100
100
5
50
V
mV
nA
A
pF
ns
I
R
reverse current
[1]
-
-
-
C
d
t
rr
diode capacitance
reverse recovery time
[2]
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAS281 | Schottky Barrier Diodes |
| BAS282 | Schottky Barrier Diodes |
| BAS283 | Schottky Barrier Diodes |
| BAS282-GS18 | SCHOTTKY DIODES SOD80 QUADROMELF-E2 - Tape and Reel |
| BAS283-GS08 | BAS281, BAS282, BAS283 Small Signal Schottky Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS21VD /T2 | 功能描述:二極管 - 通用，功率，開關(guān) DIODE SW TRPL TAPE-7 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS21VD /T3 | 功能描述:二極管 - 通用，功率，開關(guān) DIODE SW TRIPLE TAPE-11 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS21VD,135 | 功能描述:二極管 - 通用，功率，開關(guān) DIODE SW TRIPLE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS21VD,165 | 功能描述:二極管 - 通用，功率，開關(guān) DIODE SW TRPL TAPE-7 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS21-V-G | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Switching Diodes, High Voltage |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。