參數(shù)資料
型號(hào): BAR64V-03W-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: SILICON, PIN DIODE
封裝: ROHS COMPLIANT, PLASTIC PACKAGE -3
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 124K
代理商: BAR64V-03W-GS18
BAR64V-03W
Vishay Semiconductors
Document Number 85665
Rev. 1.2, 15-Apr-05
www.vishay.com
1
18375
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2
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RF PIN Diode - Single in SOT-323
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-03W was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (rf) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for this PIN Diodes are
switches and attenuators in wireless, mobile and TV-
systems.
Features
High reverse Voltage
Small reverse capacitance
High breakdown voltage
Lead (Pb)-free component
Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For frequency up to 3 GHz
RF-signal tuning
Signal attenuator and switches
Mobile, wireless and TV-Applications
Mechanical Data
Case:
SOT-323 Plastic case
Weight:
approx. 6.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Part
Ordering code
Marking
Remarks
BAR64V-03W
BAR64V-03W-GS18 or BAR64V-03W-GS08
DW3
Tape and Reel
Test condition
Symbol
V
R
I
F
T
j
T
stg
Value
100
Unit
V
Forward current
100
mA
Junction temperature
150
°C
Storage temperature range
- 55 to + 150
°C
e3
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