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參數(shù)資料
| 型號： | BAQ35-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Switching 140V 0.2A 2-Pin Mini-MELF SOD-80 T/R |
| 中文描述： | Diodes (General Purpose, Power, Switching) 125 Volt 200mA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 72K |
| 代理商： | BAQ35-GS08 |
BAQ33, BAQ34, BAQ35
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 31-Jul-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85537
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Reverse Current vs. Junction Temperature
Fig. 2 -
Forward Current vs. Forward Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
I
F
= 100 mA
E
300 Ix, rated V
R
E
300 Ix, rated V
R
, Tj = 125 °C
E
300 Ix, V
R
= 15 V
E
300 Ix, V
R
= 30 V
E
300 Ix, V
R
= 60 V
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
I
R
= 5 μA, t
/T = 0.01,
t
p
= 0.3 ms
Diode capacitance
V
R
= 0 V, f = 1 MHz
PART
SYMBOL
V
F
I
R
I
R
I
R
I
R
I
R
MIN.
TYP.
MAX.
1
3
0.5
1
1
1
UNIT
V
nA
μA
nA
nA
nA
Reverse current
1
BAQ33
BAQ34
BAQ35
0.5
0.5
0.5
Breakdown voltage
BAQ33
V
(BR)
40
V
BAQ34
BAQ35
V
(BR)
V
(BR)
C
D
70
140
V
V
pF
3
0
4
0
8
0
120
160
1
10
100
1000
10 000
I
v
e
u
r
R
T
j
- J
u
nction Temperat
u
re (°C)
200
94 9079
Scattering Limit
V
R
=
V
RRM
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
F
-
F
w
a
u
r
V
F
- For
w
ard
V
oltage (
V
)
2.0
94 9078
Scattering Limit
T
j
= 2 °C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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