參數(shù)資料
型號: B123ES
廠商: NXP Semiconductors N.V.
英文描述: PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW
中文描述: 進步黨500個,50 V電阻毫安裝備晶體管R1 \u003d 2.2千瓦,R2的\u003d 2.2千瓦
文件頁數(shù): 7/10頁
文件大小: 73K
代理商: B123ES
9397 750 14904
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
7 of 10
Philips Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 k
, R2 = 2.2 k
9.
Packing information
[1]
For further information and the availability of packing methods, see
Section 14
.
Table 9:
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
Packing methods
Packing quantity
3000
-115
-
-
-
-
-215
5000
-
-412
-
-
-112
-
10000
-135
-
-116
-126
-
-235
PDTB123EK
PDTB123ES
SOT346
SOT54
SOT54A
4 mm pitch, 8 mm tape and reel
bulk, straight leads
tape and reel, wide pitch
tape ammopack, wide pitch
bulk, delta pinning
4 mm pitch, 8 mm tape and reel
SOT54 variant
SOT23
PDTB123ET
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