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參數(shù)資料
| 型號： | AV13005 |
| 廠商： | Avic Technology |
| 英文描述： | TO-220 NPN SILICON POWER TRANSISTOR |
| 中文描述： | 對220 NPN硅功率晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 151K |
| 代理商： | AV13005 |
@vic
AV13005
TO-220 NPN SILICON POWER TRANSISTOR
Copyright Avic Electronics Corp.
1
Website:
http://www.avictek.com
AV13005 TRANSISTOR
（
NPN
）
FEATURES
Power dissipation
P
CM
: 1.5 W
（
Tamb=25
℃）
Collector current
I
CM
: 4.0 A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
，
T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS
（
Tamb=25
℃
unless otherwise specified
）
Parameter
Symbol Test conditions
MIN MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 1000
μ
A
，
I
E
=0
700
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 10 mA
，
I
B
=0
400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 1000
μ
A
，
I
C
=0
9
V
Collector cut-off current
I
CBO
V
CB
= 700 V I
E
=0
1000
μ
A
Collector cut-off current
I
CEO
V
CE
= 400 V I
B
=0
100
μ
A
Emitter cut-off current
I
EBO
V
EB
= 9 V
，
I
C
=0
1000
μ
A
DC current gain
H
FE
（
2
）
V
CE
= 5V, I
C
= 1000 mA
10
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= 2000 mA, I
B
= 500 mA
0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= 2000mA, I
B
= 500mA
1.6
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 500 mA
f =
1MHz
5
MHz
Fall time
T
F
0.9
Storage time
T
S
I
B1
= - I
B2
=0.4A, I
C
=2A
V
CC
=120V
4.0
μ
S
CLASSIFICATION OF HFE
(2)
Rank
A
B
1
B
2
C
D
E
Range
10-15
15-20
20-25
25-30
30-35
35-40
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