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參數(shù)資料
| 型號： | AV13007 |
| 廠商： | Avic Technology |
| 英文描述： | TO-220 Plastic-Encapsulate Transistors |
| 中文描述： | 對220塑料封裝晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 252K |
| 代理商： | AV13007 |
@vic
AV13007
TO-220 Plastic-Encapsulate Transistors
AV13007
TRANSISTOR NPN
FEATURES
Power dissipation
P
CM
: 2 W Tamb=25
Collector current
I
CM
: 8 A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 1mA
I
E
=0
700
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 10mA
I
B
=0
400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 1mA
I
C
=0
9
V
Collector cut-off current
I
CBO
V
CB
= 700V
I
E
=0
1
mA
Emitter cut-off current
I
EBO
V
EB
= 9 V
I
C
=0
100
μA
h
FE 1
V
CE
= 5V, I
C
= 2 A
8
40
DC current gain
h
FE 2
V
CE
=5 V, I
C
=5A
5
30
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=2A,I
B
=0.4A
1
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=2A, I
B
= 0.4A
1.2
V
Transition frequency
f
T
Ic=500mA,V
CE
=10V
f=1MH
Z
4
MH
Z
Collector output capacitance
C
ob
V
CE
=10,I
E
=0 f=0.1MHz
80
pF
Fall time
t
f
0.7
μs
Storage time
t
s
Vcc=125V, Ic=5A
I
B1
=-I
B2
=1A
3
μs
CLASSIFICATION OF h
FE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
1 2 3
3.EMITTER
TO
1.BASE
2.COLLECTOR
220
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