參數(shù)資料
型號: ATTINY15L-1SC
廠商: Atmel
文件頁數(shù): 55/85頁
文件大小: 0K
描述: IC AVR MCU 1K FLASH 2.7V SO8
標(biāo)準(zhǔn)包裝: 95
系列: AVR® ATtiny
核心處理器: AVR
芯體尺寸: 8-位
速度: 1.6MHz
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 6
程序存儲器容量: 1KB(512 x 16)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 64 x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 4x10b
振蕩器型: 內(nèi)部
工作溫度: 0°C ~ 70°C
封裝/外殼: 8-SOIC(0.209",5.30mm 寬)
包裝: 管件
59
ATtiny15L
1187H–AVR–09/07
High-voltage Serial
Programming
Characteristics
Figure 32. High-voltage Serial Programming Timing
Low-voltage Serial
Downloading
Both the program and data memory arrays can be programmed using the SPI bus while
RESET is pulled to GND. The serial interface consists of pins SCK, MOSI (input) and
MISO (output). See Figure 33. After RESET is set low, the Programming Enable instruc-
tion needs to be executed first before program/erase instructions can be executed.
Figure 33. Serial Programming and Verify
For the EEPROM, an auto-erase cycle is provided within the self-timed write instruction
and there is no need to first execute the Chip Erase instruction. The Chip Erase instruc-
tion turns the content of every memory location in both the program and EEPROM
arrays into $FF.
The program and EEPROM memory arrays have separate address spaces: $0000 to
$01FF for Program memory and $000 to $03F for EEPROM memory.
Table 26. High-voltage Serial Programming Characteristics, T
A = 25°C ± 10%,
V
CC = 5.0V ± 10% (unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
tSHSL
SCI (PB3) Pulse Width High
25.0
ns
tSLSH
SCI (PB3) Pulse Width Low
25.0
ns
tIVSH
SDI (PB0), SII (PB1) Valid to SCI (PB3) High (8th
edge)
50.0
ns
tSHIX
SDI (PB0), SII (PB1) Hold after SCI (PB3) High (8th
edge)
50.0
ns
tSHOV
SCI (PB3) High (9th edge) to SDO (PB2) Valid
10.0
16.0
32.0
ns
SDI (PB0), SII (PB1)
SDO (PB2)
SCI (PB3)
t
IVSH
t
SHSL
t
SLSH
t
SHIX
t
SHOV
Internal CK
1
2
7
8
9
10
15
16
VALID
PB5 (RESET)
GND
VCC
PB2
PB1
PB0
SCK
MISO
MOSI
2.7 - 5.5V
ATtiny15/L
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