參數(shù)資料
型號(hào): ATS635LSE
廠商: Allegro MicroSystems, Inc.
英文描述: Programmable Back Biased Hall-Effect Switch with TPOS Functionality
中文描述: 可編程回到偏霍爾效應(yīng)的聚烯烴功能開(kāi)關(guān)
文件頁(yè)數(shù): 13/15頁(yè)
文件大小: 814K
代理商: ATS635LSE
ATS635LSE and ATS636LSE
PROGRAMMABLE TRUE POWER-ON HALL-EFFECT GEAR-TOOTH SWITCHES
Page 13 of 15
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
Copyright 200
5
Allegro MicroSystems, Inc.
POWER DE-RATING – SE Package
Power De -Rating
Due to internal power consumption, the temperature of the
IC (junction temperature, T
J
) is higher than the ambient
environment temperature, T
A
. To ensure that the device
does not operate above the maximum rated junction
temperature use the following calculations:
T=P
D
× R
θ
JA
Where P
D
= V
CC
× I
CC
T = V
CC
× I
CC
× R
θ
JA
Where
T denotes the temperature rise resulting from the
IC’s power dissipation:
T
J
= T
A
+
T
R
θ
JA
= 77°C/W
Typical T
J
Calculation:
T
A
= 25°C, V
CC
= 5 V, I
CC(on)
= 5.5 mA
P
D
= V
CC
× I
CC
P
D
= 5 V × 5.5 mA = 27.5 mW
T = P
D
× R
θ
JA
= 27.5 mW × 77°C/W = 2.0°
T
J
= T
A
+
T = 25°C + 2.0°C = 27.0°C
Maximum Allowable Power Dissipation Calculation
T
J
= T
A
+
T
T
J(max)
= 165°C, if T
A
= 150°C then:
165 = 150 +
T
T = 15°C
DT = P
D
× R
θ
JA
(R
θ
JA
= 77°C/W)
\ P
D(max)
= 15°C / 77°C/W = 195 mW @ T
A
= 150°C
Maximum V
CC
for P
D(max)
=111 mW at T
A
=150°C
P
D
= V
CC
× I
CC
I
CC
= 10mA (max) at 150°C
V
CC
= P
D
/ I
CC
= 195 mW / 5.5 mA = 35.4 V
T
J(max)
= 165°C
0
500
1000
1500
2000
2500
3000
3500
4000
4500
20
40
60
80
Temperature (°C)
100
120
140
160
180
P
D
Power Dissipation versus Ambient Temperature
(R
θ
JA
= 77 oC/W)
2-layer PCB
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